Low-threshold laterally oxidized GaInP-AlGaInP quantum-well laser diodes
High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence | Semantic Scholar
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Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes - ScienceDirect
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USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode - Get a price quote from The Optoelectronics Company Ltd
Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates
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USHIO HL6501MG 685nm 55mW AlGaInP Laser Diode 5.6mm TO-18 | eBay
AlGaInP laser diode structures with different ridge designs. | Download Table
HL63373HD 638nm /1.0W (CW) /1.2W (Pulse) AlGaInP Laser Diode - Necsel - PDF Catalogs | Technical Documentation | Brochure
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Ushio HL63101MG HL63102MG 637nm 7mW AlGaInP Laser Diode 5.6mm TO-18 | eBay
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Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C
.jpg "Original Hitachi 635/638nm HL63133DG 170mW Single mode Orange red laser diode")
Original Hitachi 635/638nm HL63133DG 170mW Single mode Orange red laser diode
